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 2STA1962
High power PNP epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz
3 2 1
Application
Audio power amplifier
TO-3P
Description
This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube
July 2008
Rev 3
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Electrical ratings
2STA1962
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at TC = 25 C Storage temperature Operating junction temperature Value -230 -230 -5 -15 -30 150 -55 to 150 150 Unit V V V A A W C C
Table 3.
Symbol RthJ-case
Thermal data
Parameter Thermal resistance junction-case Max Value 0.83 Unit C/W
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2STA1962
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = -230 V VEB = -5 V -230 -230 -5 IB = -800 mA VCE = -5 V VCE = -5 V VCE = -5 V 80 35 -3 -1.5 160 Min. Typ. Max. -5 Unit A
-5
A
Collector-emitter breakdown IC = -50 mA V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = -100 A IE = -1 mA IC = -8 A IC = -7 A IC = -1 A IC = -7 A
V V V V V
Emitter-base breakdown V(BR)EBO(1) voltage (I = 0) C VCE(sat)(1) VBE hFE Collector-emitter saturation voltage Base-emitter voltage DC current gain Resistive load Turn-on time Storage time Fall time Transition frequency Collector-base capacitance (IE = 0)
ton ts tf fT CCBO
VCC = -60 V IC = -5 A IB1= -IB2 = -0.5 A IC = -1 A VCE = -5 V
0.24 1.2 0.21 30 150
s s s MHz pF
VCB = -10 V f = 1 MHz
1. Pulsed: pulse duration = 300 s, duty cycle < 1.5%
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Electrical characteristics
2STA1962
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage Figure 7.
Collector current vs base-emitter voltage
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2STA1962
Electrical characteristics
2.2
Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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Package mechanical data
2STA1962
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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2STA1962
Package mechanical data
TO-3P Mechanical data
DIM. A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 L2 P Q Q1 MIN. 4.6 1.45 1.20 0.80 1.80 2.80 0.55 19.70 15.40 13.60 9.60 5.45 20 3.50 18.40 5 3.80 mm. TYP 1.50 1.40 1 MAX. 5 1.65 1.60 1.20 2.20 3.20 0.75 20.10 15.80
0.60 19.90 13.90
5.15 19.50 18.20 3.10
5.75 20.50 18.60 3.30
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Revision history
2STA1962
4
Revision history
Table 5.
Date 28-Sep-2007 12-Dec-2007 15-Jul-2008
Document revision history
Revision 1 2 3 Initial release. Document promoted from preliminary data to datasheet. Updated total power dissipation and relevant thermal resistance junction-case value. Changes
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2STA1962
Revision history
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